BFR 380L3 E6327

RF discretes Selection guide Infrastructure www.infineon.com/rf Bluetooth Contents Introduction RF discretes 3 RF transistors 5 RF transistors – 7th generation 6 RF transistors – 8th generation 7 Medium-power amplifiers 8 RF transistors – product portfolio 9 PIN diodes 12 Schottky diodes 14 RF diodes portfolio by package 16 Infineon support for RF discretes 17 Cross reference list 18 2 Introduction RF discretes Robust, flexible, small and reliable devices for complementary wireless solutions As society becomes ever more mobile, 24/7 universal network availability and connectivity will play a big role in our future. Data traffic in mobile systems and infrastructure will continue to increase tremendously and by 2020 there will be 50.1 billion units of expected connected devices and data rates will reach 1 Gbps through 5G deployment, because people will continue to expand the role of mobile data in their everyday life. Multiple devices connected to one another will be used to post, share and stream content, with videos making up the bulk of this traffic. As a part of this constant increase the growing of access points under the form of small cells, infotainment and navigation assistance in automotive for instance will play a major role in tomorrow’s communications. Granting stable and reliable wireless reception and transmission at multiple or specific bands will enable users to access the net through devices equipped with wireless network interface, while roaming within the range of fixed Access Points (AP) or a public cell. and interference immunity enhancement, and making receiving and transmitting signals more stable and reliable ››Versatility: With regard to product portfolio availability, we outdo our competitors by a factor of 2 and provide our customers with the necessary versatility during design-in by offering a wide choice of different packages, conventional SOTs or miniaturized TSLPs, and device features ››Supply security: We provide competitive lead times of ≤ 6 weeks, while ensuring the ability to handle demand upswings with two dedicated FEs and two BEs. Our commitment to customers’ shipment dates and supply performance always exceeds industry standards by 2 percent, i.e. 97 percent instead of 95 percent ››Quality and reliability: Our field failure rates are on average < 0.1 PPM, providing the quality standards for which Infineon is renowned throughout the semiconductor industry ››Design-in and sales support: We support our customers with a worldwide field application engineering and sales team, providing a professional and flexible design-in service 98.3% 96.3% 97.2% 98.7% 98.7% 98.8% 98.1% 98.4% 95.0% 100% 98.8% Infineon provides with the broadest RF discretes portfolio for complementary wireless 97.2% Customer Shipment Date (CSD) performance on average ≥ 97% 97.3% Last but not least, we lead innovation and have a proven ability to flexibly support our customers in fragmented and rapidly developing markets. 96.4% Our products stand for ››Performance: Our 8th gen. RF transistors deliver the best NF available on the market – 0.6 dB as measured in the application – delivering an improvement in system sensitivity 160 95% Industry standard 140 120 Number of products count 124 100 80 90% 62 60 40 31 2016-04 2016-03 2016-02 2016-01 2015-12 2015-11 2015-10 2015-09 2015-08 2015-07 2015-06 2015-05 80% 2015-04 20 0 Infineon 21 10 Competitor N Competitor T Competitor R Competitor S The following pages provide guidance in selecting suitable products for particular applications. 3 4 RF transistors For over a decade, Infineon Technologies have paved the way in all radio frequency segments, with RF transistors providing an outstanding RF performance, superior signal quality and robustness – all this at a highly attractive price. while also providing higher robustness given the ESD protection, strong design reliability and the option of integrating dense analog circuitry and digital control on the same mixed-signal IC. Not only does this allow wireless equipment manufacturers to add more functionality onto devices where space is a constraint, but it is also available at a competitive price, while offering the ultimate in quality and manufacturing efficiency. Silicon-germanium (SiGe) based on B9 technology benefits from in-house process builds and years of experience in high-volume SiGe:C bipolar technology, which has been in mass production since 2002. B9 comes in different variants, but the 7th and 8th generations – each with its own optimization for specific application areas – are our focus series. Noise Figure (NFmin) High B9-based product serie deliver an RF performance comparable to GaAs in terms of linearity and noise figures; General-purpose LNAs st 1 – 3rd Gen. fT (max) = 6–8 GHz NFmin = 1.4–2.1 dB1) 4th Gen. Noise 2) fT (max) = 25 GHz NFmin = 1.1 dB1) Very low noise th 5 Gen. 2) Low fT (max) = 29 GHz NFmin = 0.9 dB1) 6th Gen. fT (max) = 40 GHz NFmin = 0.7 dB1) 1) As measured in the application 2) Available with ESD for improved robustness Low Frequency (fT (max) in GHz) Ultra low noise 2) th 7 Gen. 2) fT (max) = 44 GHz NFmin = 0.6 dB1) 8th Gen. 2) fT (max) = 80 GHz NF min = 0.5 dB1) High 5 RF transistors – 7th generation Ease of use for complementary wireless connectivity Infineon’s 7th generation RF transistor family is an easyto-use series of discrete Heterojunction Bipolar Transistors (HBT) which is suitable as a single- and dual-band LowNoise Amplifier (LNA) solution for a vast range of WiFi con­ nectivity applications. capacitance in order to enhance high-frequency characteristics. Furthermore, they allow engineers to increase the RF link budget and Signal-to-Noise Ratio (SNR) of their AP routers and mobile stations when wider coverage areas are needed and especially when a higher order modulation scheme, such as 256 Quadrature Amplitude Modulation (QAM), is used. They offer a high throughput where a more stringent SNR for both the AP and client is required. This series of devices combines a 44 GHz f T silicon-germa­ nium:carbide (SiGe:C) B7HF process with advanced device geometry engineering conceived to reduce the parasitic Key features Technical benefits Customer benefits Ease of use RF performance ››High transition frequency f T = 45 GHz ››High gain (19 dB) and NF level (0.65 dB) ››High linearity OP1dB +8.5 dBm and OIP3 +19 dBm at 2.4 GHz at low current consumption of 13 mA ››High maximum RF input power ››1.5 kV HBM ESD robustness ››Broad frequency range: ››Unmatched general purpose device for from 450 MHz to 12 GHz ››Reduced power consumption ››Device suitability under input signal power-stress 2.4 40 2.2 f = 3.5 GHz f = 2.4 GHz f = 1.9 GHz f = 1.5 GHz f = 0.9 GHz f = 0.45 GHz f = 10 GHz 2.0 1.8 1.4 0.9 GHz 1.5 GHz 1.9 GHz 2.4 GHz 3.5 GHz 25 1.0 20 5.5 GHz 15 0.8 0.6 10 GHz 10 0.4 5 0.2 0 5 10 15 20 25 IC [mA] Infineon’s 7th generation general-purpose transistors offer RF engineers an outstanding performance. With noise figures of as low as 0.45 dB in sub-GHz range and of 0.9 dB at 5.5 GHz, this transistor series functions as a low-noise amplifier and provides improved system sensitivity in wireless communication and broadcasting systems. 6 0.45 GHz 30 f = 5.5 GHz 1.2 0.15 GHz 35 Gmax [dB] NFmin [dB] 1.6 0 high flexibility in vast frequency range ››Energy savings and extended battery life ››Improved high input power robustness 0 0 5 10 15 20 25 30 IC [mA] 35 40 45 50 55 With Gmax of more than 10 dB at 10 GHz, Infineon’s 7th generation product portfolio can also be used as a gain block for buffer or driver amplifiers, or as a mixer or VCO for frequencies higher than 10 GHz. RF transistors – 8th generation Best-in-class performance for WiFi connectivity The BFx840x product family is a series of discrete Heterojunction Bipolar Transistors (HBT) addressing dual- and fixedfrequency Low-Noise Amplifier (LNA) solutions for high-performance WiFi connectivity applications. It combines an 80 GHz f T silicon-germanium:carbide (SiGe:C) B9HF process and adopts dedicated device geometry reducing the parasitic capacitance between substrate and transistor degrades high-frequency characteristics and ultimately improved. 8th generation RF transistors allow engineers to increase the RF link budget and Signal-to-Noise Ratio (SNR) of their AP routers and mobile stations when wider coverage areas are needed mostly or when a higher order modulation scheme is used, such as in emerging very high throughput wireless specifications like 256 Quadrature Amplitude Modulation (QAM) in IEEE 802.11ac, which has more stringent SNR requirements for both the AP client. Best-in-class 8th generation RF transistors: NF and Gmax SiGe competitor comparison 0.8 Best in class 30 25 Gain [dB] NF [dB] 0.7 -15% Best in class 0.6 +17% 20 15 10 5 0.5 BPx740 series BPx840 series 0 Comp. N BPx740 series BPx840 series Comp. N 8th generation RF transistors come with an improved BiC in relation to NF and power gain Gmax compared to previous generations and closest SiGe competitors. Block diagram SPDT switch Antenna 2.4 / 5 GHz 2.4 GHz LNA Rxg 2.4 GHz PA Power detector SPDT switch ESD diode SPDT switch Low-Noise Amplifiers (LNA) are key components required to increase the system sensitivity and extend the max. connecting distance for WiFi applications. Their primary purpose involves delivering a superior performance where losses of the whole RF front end become critical due to long routing paths, for instance in WiFi architectures with 4 x 4 MIMO or 8 x 8 MIMO functions. WiFi Transceiver 5 GHz LNA Rxg 5 GHz PA Power detector Txg Txg Infineon’s 8th generation RF SiGe Bipolar transistors act as an LNA, delivering the lowest Noise Figure (NF) of 0.6 dB at 5.5 GHz, and the highest gain thanks to their high frequency (f T) and superior linearity compared to other solutions on the market. This outstanding performance delivers an improvement in system sensitivity and interference immunity enhancement, helping engineers to design high-performance WiFi applications at an attractive price. 7 Medium-power amplifiers Infrastructure Infineon’s first generation The BFP780 and BFQ790 are Infineon’s new generalpurpose high-gain driver amplifiers based on Infineon’s cost-effective Silicon Germanium (SiGe) technology. Optimized for power gain and addressing a broad range of wireless applications, they are a new addition to the existing RF product portfolio. Suitable for commercial and industrial wireless infrastructure ­– such as 3G/4G, set-top boxes and CATV, along with indoor and outdoor wireless access points – these 40 IC 30 20 10 -10 -25 -20 -15 -10 -5 275 265 260 PAE 0 280 270 POut G The emitter-base diode design provides the BFP780 and BFQ790 with high ruggedness even at high maximum RF input power, whereas the silicon substrate conductivity and low thermal resistance of the package make the devices thermally resistant, facilitating high dissipated power values during operation. Gmax [dB] IP1dB IC [mA] POut [dBm], gain [dB], PAE [%] 50 single-stage driver amplifiers provide high linearity and high gain for use at frequencies up to 3.0 GHz, while also ensuring great flexibility in designs where high linearity is a determining factor in component selection. 255 0 5 10 15 250 32 30 28 26 24 22 20 18 16 14 12 0.45 GHz 0.90 GHz 1.80 GHz 2.60 GHz 3.50 GHz 0 20 40 60 80 100 120 IC [mA] PIn [dBm] POut, gain, IC, PAE vs. PIn at VCE = 5 V, ICq = 250 mA, f = 2.6 GHz, ZI = ZOpt Maximum power gain Gmax vs. IC at VCE = 5 V, f = parameter Block diagram LNA Duplexer ESD diode PA Driver Transceiver BFP780 BFQ790 Driver amplifiers, also known as high linear gain blocks, are an important functional block in RF transceiver systems. The final stage of the transmitter chain in the transceiver system, Power Amplifier (PA), requires a certain input power level to deliver to the required output power, which usually cannot be delivered by the transceiver IC directly. 8 In these cases, external one- or two-stage driver amplifiers are required. Driver amplifiers provide the high gain linear signal amplification from the transceiver IC to the PA. They are generally operated in linear class-A mode to enable simultaneous high linearity and high gain, thereby keeping the spurious signals generated by the PA down to a minimum. RF transistors – product portfolio RF transistors 7th generation Product name OPN IC (max.) [mA] NFmin (typ) [dB] Gmax (typ) [dB] OIP3 [dBm] OP1dB [dBm] Package BFP720 BFP720H6327XTSA1 20 0.5 26.0 20.5 6.0 SOT343 BFP720F BFP720FH6327XTSA1 20 0.5 26.0 20.5 6.0 TSFP-4-1 BFP720ESD BFP720ESDH6327XTSA1 25 0.6 27.0 22.0 6.5 SOT343 BFP720FESD BFP720FESDH6327XTSA1 25 0.6 27.0 22.0 7.0 TSFP-4-1 BFP740 BFP740H6327XTSA1 45 0.5 27.0 25.0 11.0 SOT343 BFP740F BFP740FH6327XTSA1     45 0.5 27.5 25.0 11.0 TSFP-4-1 BFP740ESD BFP740ESDH6327XTSA1 35 0.6 27.0 25.0 10.0 SOT343 BFP740FESD BFP840FESDH6327XTSA1 35 0.6 27.0 24.5 10.0 TSFP-4-1 BFR740L3RH BFR740L3RHE6327XTSA1 30 0.5 24.5 25.0 11.0 TSLP-3-9 BFP760 BFP760H6327XTSA1 70 0.5 25.0 31.5 14.5 SOT343 RF transistors 8th generation Product name OPN NFmin (typ) [dB] Gmax (typ) [dB] OIP3 [dBm] OP1dB [dBm] Package BFP843 BFP843H6327XTSA1 0.95 22.5 24.0 7.0 SOT343 BFP843F BFP843FH6327XTSA1 0.90 23.5 23.5 7.0 TSFP-4-1 BFR843EL3 BFR843EL3E6327XTSA1 0.95 24.0 21.0 7.0 TSLP-3-9 BFP840ESD BFP840ESDH6327XTSA1 0.60 27.0 21.0 4.5 SOT343 BFP840FESD BFP840FESDH6327XTSA1 0.55 27.5 21.0 4.5 TSFP-4-1 BFP842ESD BFP842ESDH6327XTSA1 0.40 23.5 24.5 8.0 SOT343 BFR840L3RHESD BFR840L3RHESDE6327XTSA1 0.50 26.5 17.0 4.0 TSLP-3-9 Infrastructure RF drivers Product name BFP780 BFQ790 1) OPN At 1.9 GHz At 2.7 GHz Package Gain [dB] OIP3 [dBm] OP1dB [dBm] Gain [dB] OIP3 [dBm] OP1dB [dBm] BFP780H6327XTSA1 18 35 23 14.4 35 23 SOT343 BFQ790H6327XTSA1 17 40 27 14.0 40 27 SOT89 1) Available as of Q4/2016 9 RF transistors – product portfolio Infrastructure Low-noise Si transistor up to 2.5 GHz Product name SP No BFP181 SP000011013 BFR181 OPN Electrical characteristics Package VCEO (max) [V] IC (max) [mA] NFmin (typ) [dB] Gmax (typ) [dB] OIP3 OP1dB f T (typ) [dBm] [dBm] [GHz] Ptot (max) [mW] BFP181E7764HTSA1 12.0 20.0 0.9 21.0 16.5 -2.0 8.0 175.0 SOT143-4-1 SP000011047 BFR181E6327HTSA1 12.0 20.0 0.9 18.5 18.0 -1.0 8.0 175.0 SOT23 BFR181W SP000750418 BFR181WH6327XTSA1 12.0 20.0 0.9 19.0 18.0 -1.0 8.0 175.0 SOT323 BFP182R SP000011016 BFP182RE7764HTSA1 12.0 35.0 0.9 22.0 24.0 5.0 8.0 250.0 SOT143-4-1 BFP182W SP000745176 BFP182WH6327XTSA1 12.0 35.0 0.9 22.0 24.0 5.0 8.0 250.0 SOT343 BFR182 SP000011051 BFR182E6327HTSA1 12.0 35.0 0.9 18.0 24.5 5.0 8.0 250.0 SOT23 BFR182W SP000750420 BFR182WH6327XTSA1 12.0 35.0 0.9 19.0 25.0 5.0 8.0 250.0 SOT323 BFP183W SP000745244 BFP183WH6327XTSA1 12.0 65.0 0.9 22.0 26.5 8.5 8.0 450.0 SOT343 BFR183 SP000011054 BFR183E6327HTSA1 12.0 65.0 0.9 17.5 27.0 9.0 8.0 450.0 SOT23 BFR35AP SP000011060 BFR35APE6327HTSA1 15.0 45.0 1.4 16.0 24.0 9.0 5.0 280.0 SOT23 BFR92P SP000011062 BFR92PE6327HTSA1 15.0 45.0 1.4 16.0 24.0 9.0 5.0 280.0 SOT23 BFS17P SP000011073 BFS17PE6327HTSA1 15.0 25.0 3.5 12.7 21.5 10.0 1.4 280.0 SOT23 BFS17S SP000750448 BFS17SH6327XTSA1 15.0 25.0 3.0 12.7 22.5 11.0 1.4 280.0 SOT363 BFS17W SP000750450 BFS17WH6327XTSA1 15.0 25.0 3.5 12.7 22.5 11.0 1.4 280.0 SOT323 BFS481 SP000750462 BFS481H6327XTSA1 12.0 20.0 0.9 20.0 18.0 -1.0 8.0 175.0 SOT363 BFS483 SP000750464 BFS483H6327XTSA1 12.0 65.0 0.9 19.0 26.5 9.0 8.0 450.0 SOT363 BFR340F SP000750426 BFR340FH6327XTSA1 6.0 10.0 1.15 16.5 13.0 -1.0 14.0 60.0 TSFP-3-1 BFR340L3 SP000013558 BFR340L3E6327XTMA1 6.0 10.0 1.15 17.5 12.5 -1.0 14.0 60.0 TSLP-3-7 BFR360F SP000750428 BFR360FH6327XTSA1 6.0 35.0 1.0 15.5 24.0 9.0 14.0 210.0 TSFP-3-1 BFR360L3 SP000013561 BFR360L3E6765XTMA1 6.0 35.0 1.0 16.0 24.0 9.0 14.0 210.0 TSLP-3-1 BFP183 SP000011018 BFP183E7764HTSA1 12.0 65.0 0.9 22.0 26.5 8.5 8.0 250.0 SOT143 Low-noise Si transistor up to 5 GHz Product name 10 SP No OPN Electrical characteristics VCEO (max) [V] IC (max) [mA] NFmin (typ) [dB] Gmax (typ) [dB] OIP3 OP1dB [dBm] Package [dBm] fT (typ) [GHz] Ptot (max) [mW] BFP405 SP000745254 BFP405H6327XTSA1 4.5 12.0 1.25 23.0 15.0 5.0 25.0 55.0 SOT343 BFP405F SP000745258 BFP405FH6327XTSA1 4.5 12.0 1.25 22.5 14.0 0.0 25.0 55.0 TSFP-4-1 BFP410 SP000762244 BFP410H6327XTSA1 4.5 40.0 1.2 21.5 23.5 10.5 25.0 150.0 SOT343 BFP420 SP000745260 BFP420H6327XTSA1 4.5 35.0 1.1 21.0 22.0 12.0 25.0 160.0 SOT343 BFP420F SP000745268 BFP420FH6327XTSA1 4.5 35.0 1.1 19.5 24.0 10.5 25.0 160.0 TSFP-4-1 BFP460 SP000745276 BFP460H6327XTSA1 4.5 50.0 1.1 17.5 27.5 11.5 22.0 200.0 SOT343 BFP520 SP000745280 BFP520H6327XTSA1 2.5 40.0 0.95 23.5 25.0 12.0 45.0 100.0 SOT343 BFP520F SP000745282 BFP520FH6327XTSA1 2.5 40.0 0.95 22.5 23.5 10.5 45.0 100.0 TSFP-4-1 BFP540 SP000745288 BFP540H6327XTSA1 4.5 80.0 0.9 21.5 24.5 11.0 30.0 250.0 SOT343 BFP540ESD SP000745298 BFP540ESDH6327XTSA1 4.5 80.0 0.9 21.5 24.5 11.0 30.0 250.0 SOT343 BFP540FESD SP000745300 BFP540FESDH6327XTSA1 4.5 80.0 0.9 20.0 24.5 11.0 30.0 250.0 TSFP-4-1 BFR460L3 SP000014238 BFR460L3E6327XTMA1 4.5 50.0 1.1 16.0 27.0 11.5 22.0 200.0 TSLP-3-1 Ultra-low-noise SiGe:C transistors up to 12 GHz Product name SP No BFP640ESD SP000785482 BFP640FESD OPN Electrical characteristics VCEO (max) [V] IC (max) [mA] NFmin (typ) [dB] Gmax (typ) [dB] OIP3 OP1dB [dBm] BFP640ESDH6327XTSA1 4.1 50.0 0.65 25.0 27.0 SP000890034 BFP640FESDH6327XTSA1 4.1 50.0 0.55 26.5 BFP620 SP000745302 BFP620H7764XTSA1 2.3 80.0 0.7 BFP620F SP000745304 BFP620FH7764XTSA1 2.3 80.0 BFP640 SP000745306 BFP640H6327XTSA1 4.0 50.0 BFP640F SP000750404 BFP640FH6327XTSA1 4.0 50.0 Package [dBm] fT (typ) [GHz] Ptot (max) [mW] 12.0 46.0 200.0 SOT343 26.0 11.5 46.0 200.0 TSFP-4-1 21.5 25.5 14.5 65.0 185.0 SOT343 0.7 21.0 25.0 14.0 65.0 185.0 TSFP-4-1 0.65 24.0 26.5 13.0 40.0 200.0 SOT343 0.65 23.0 27.5 13.5 40.0 200.0 TSFP-4-1 High-linearity Si-and SiGe:C transistors up to 6 GHz Product name SP No OPN Electrical characteristics VCEO (max) [V] IC (max) [mA] NFmin (typ) [dB] Gmax (typ) [dB] OIP3 OP1dB [dBm] Package [dBm] fT (typ) [GHz] Ptot (max) [mW] BFQ19S SP000011042 BFQ19SE6327HTSA1 15.0 210.0 1.8 11.5 32.0 22.0 5.5 1.0 SOT89 BFR93A SP000011066 BFR93AE6327HTSA1 12.0 90.0 1.5 14.5 30.0 15.0 6.0 300.0 SOT23 BFR93AW SP000734402 BFR93AWH6327XTSA1 12.0 90.0 1.5 15.5 30.0 15.0 6.0 300.0 SOT323 BFR106 SP000011044 BFR106E6327HTSA1 15.0 210.0 1.8 13.0 32.0 22.0 5.0 700.0 SOT23 BFP193 SP000011024 BFP193E6327HTSA1 12.0 80.0 1.0 18.0 29.5 15.0 8.0 580.0 SOT143-4-1 BFP193W SP000745248 BFP193WH6327XTSA1 12.0 80.0 1.0 20.5 29.5 15.0 8.0 580.0 SOT343 BFR193 SP000011056 BFR193E6327HTSA1 12.0 80.0 1.0 15.0 30.0 15.0 8.0 580.0 SOT23 BFR193F SP000750424 BFR193FH6327XTSA1 12.0 80.0 1.0 19.0 29.0 14.8 8.0 580.0 TSFP-3-1 BFR193W SP000734404 BFR193WH6327XTSA1 12.0 80.0 1.3 16.0 30.0 15.0 8.0 580.0 SOT323 BFR193L3 SP000013557 BFR193L3E6327XTMA1 12.0 80.0 1.0 19.0 29.0 15.0 8.0 580.0 TSLP-3-1 BFP196W SP000745250 BFP196WH6327XTSA1 12.0 150.0 1.3 19.0 32.0 19.0 7.5 700.0 SOT343 BFR380F SP000750444 BFR380FH6327XTSA1 6.0 80.0 1.1 13.5 29.0 17.0 14.0 380.0 TSFP-3-1 BFR380L3 SP000013562 BFR380L3E6327XTMA1 6.0 80.0 1.1 13.5 29.5 16.0 14.0 380.0 TSLP-3-1 BFP450 SP000745270 BFP450H6327XTSA1 4.5 100.0 1.25 15.5 29.0 19.0 24.0 450.0 SOT343 BFP650 SP000750406 BFP650H6327XTSA1 4.0 150.0 0.8 21.5 29.5 18.0 37.0 500.0 SOT343 BFP650F SP000750408 BFP650FH6327XTSA1 4.0 150.0 0.8 21.5 31.0 17.5 42.0 500.0 TSFP-4-1 BFP196 SP000011027 BFP196E6327HTSA1 12.0 150.0 1.3 19.0 32.0 19.0 7.5 700.0 SOT143-4-1 11 PIN diodes Operating at up to 3 GHz with high-voltage handling capabilities, Infineon Technologies PIN diodes are ideal for a wide range of mobile communication and RF applications. Their low loss and low distortion levels improve battery life and quality in cellular and cordless phones. resistance, diode capacitance and series inductance. These inherent qualities are largely due to a state-of-theart planar diffusion process. Available in a range of highly compact package options – including TSLP and the leadless – significant board space savings can be made, helping designers create smaller, lighter end-products. Along with an outstanding RF performance, these diodes simplify design-in thanks to their extremely low forward Key features Technical benefits Customer benefits ››Low insertion loss (low rf) ››High isolation (low capacitance Ct) ››Low power consumption (low IF) ››Low level of high-frequency distortion ››Broad product portfolio ››Package miniaturization ››Single and dual configuration ››High linearity ››Fast switching time for Rx-Tx antenna ››Flexibility in circuit design with a focus on ››Low insertion loss and low dissipated ››Enhanced versatility in design conception ››Improved system efficiency required parameters ››Easily adaptable to different applications/ switches frequencies power in Rx-Tx antenna switches ››Enhanced overall RF performance Customer benefits – space saving SOT23 12 SC79 ››Small form factor: 70% of package 0.62 ±0.035 0.32 ±0.035 1.2 ±0.1 1.6 ±0.1 0.8 ±0.1 1.3 ±0.1 2.4 ±0.15 2.9 ±0.1 TSSLP-2-1, -2 profile increases design flexibility ››90% reduction of parasitics ››Improved RF performance at insertion Application example: single-antenna cordless phone ››Two single PIN diodes or one dual diode are at the core of BPF LNA Rx Transceiver IC SPDT switch Tx ESD diode BPF Buffer amplifier BPF an SPDT switch ››Depending on the bias voltage, one of the diodes is in “short”, another in “open” state, effectively connecting either the Tx or Rx path to the antenna ››Infineon PIN diodes are ideal for building a switch which simultaneously delivers a low insertion loss and high isolation Buffer amplifier BFP450, BFP650, BFP750 Low-noise amplifier BFP640, BFP740, BFP840 ANT SW PIN diodes BAR64-xx, BAR63-xx, BAR90-xx TVS diode ESD108, ESD128, ESD129 Infrastructure PIN diodes – product portfolio CT series [pF] Product name > 50 pF BA592 BAR14-1/15-1/16-1 BAR61 BAR64-03W, -02V BAR64-02EL BAR64-04/05/06/*07 BAR64-04W/05W/06W BAR65-03W, -02V BAR66 BAR67-02V BAR67-04 BA885, BA595 BA895-02V BAR88-02V BAR88-02LRH1) BAR89-02LRH1) BAR90-02EL, -02ELS BAR90-02LRH1) BAR90-081LS BAT18-04,-05 BAR50-03W, -02V BAR50-02L BAR63-03W, -02V BAR63-02L BAR63-04/05/06 BAR63-04W/05W/06W < 50 pF ≤ 25 pF 1) Not recommended for new designs D D D D Q D D D CT at 1 V [pF] Rf at 10 mA [Ω] τrr Package 0.92 0.50 0.50 0.45 0.45 0.45 0.45 0.45 0.45 0.40 0.40 0.35 0.35 0.30 0.30 0.25 0.25 0.25 0.25 0.75 0.24 0.24 0.23 0.23 0.23 0.23 0.36 7.00 7.00 2.10 2.10 2.20 2.30 0.60 1.00 1.00 1.00 4.50 4.50 0.60 0.60 0.80 0.80 0.80 0.80 0.40 3.00 3.00 1.00 1.00 1.00 1.00 120 ns 1.0 µs 1.0 µs 1.55 µs 1.55 µs 1.55 µs 1.55 µs 80 ns 700 ns 700 ns 700 ns 1.6 µs 1.6 µs 0.5 µs 0.5 ms 0.8 µs 0.75 µs 0.75 µs 0.75 µs 120 ns 1.1 µs 1.1 µs 75 ns 75 ns 75 ns 75 ns SOD323 SOT23 SOT143 SOD323, SC79 TSLP-2 SOT23, *SOT143 SOT323 SOD323, SC79 SOT23 SC79 SOT23 SOT23, SOD323 SC79 SC79 TSLP-2-RH TSLP-2-RH TSLP-2, TSSLP-2 TSLP-2-RH TSSLP-8 SOT23 SOD323, SC79 TSLP-2 SOD323, SC79 TSLP-2 SOT23 SOT323 D = Double configuration Q = Quad configuration 13 Schottky diodes Infineon RF Schottky diodes are silicon low-barrier N-type devices and, unlike other solutions available on the market, they come with various junction diode configurations which can be used for highly sensitive power detector circuits, and in sampling or mixer circuits. A very low barrier height and very small forward voltage, along with low junction capacitance, make this series of devices an excellent choice as a detector function at fre­ quencies as high at 24 GHz. Key features Technical benefits Customer benefits ››Low leakage current (low Rf) ››Low signal distortion level ››High efficiency / low losses ››Low power consumption ››Guard-ring protection on chip ››Broad product portfolio ››Package miniaturization ››Fast switching ››Tailored for low-/medium-power ››Flexibility in circuit design with a focus on detection circuits ››Wide dynamic range in detector applications ››Higher linearity and power handling capability compared to integrated mixers required parameters ››Easy adaptability to different applications/frequencies ››Easy detector/mixer design due to width ››Enhanced versatility in design conception ››Improved system efficiency Application example: 24GHz radar system Double-balanced mixer 24 GHz LNA Buffer amplifier Balun VCO to baseband Schottky diode BAT24-02ELS ››Unbalanced, single-balanced or double-balanced mixer topology depending on application requirements ››Balanced mixer offers good RF isolation ››Double-balanced mixer also provides good isolation between LO, RF and IF 14 Target applications ››Wireless LAN and WiFi routers ››Mobile devices ››24 GHz radar system preferring discretes solutions Schottky diodes – product portfolio Product name VR (max) [V] IF (max) [mA] CT [pF] VF at 1 mA [mV] Package BAT15-02EL/-02ELS 4 110 0.26 230 TSLP-2/TSSLP-2 BAT15-03W 4 110 0.26 230 SOD323 BAT15-04W D 4 110 0.26 230 SOT323 BAT15-05W D 4 110 0.26 230 SOT323 BAT15-04R D 4 110 0.26 230 SOT23 BAT15-099/-099LRH1) D 4 110 0.26 230 SOT143/TSLP-4 BAT15-099R Q 4 110 0.38 230 SOT143 4 130 0.55 340 SOT23 BAT17 BAT17-04/W D 4 130 0.55 340 SOT23/SOT323 BAT17-05 D 4 130 0.55 340 SOT23 BAT17-05W D 4 130 0.55 340 SOT323 BAT17-06W D 4 130 0.55 340 SOT323 BAT17-07 D 4 130 0.75 340 SOT143 BAT24-02LS 4 110 0.21 230 TSSLP BAT62 40 20 0.35 440 SOT143 BAT62-02L/-02LS 40 120 0.35 440 TSLP-2/TSSLP-2 BAT62-02V/-03W 40 20 0.35 440 SC79/SOD323 BAT62-07L4 D 40 20 0.35 440 TSLP-4 BAT62-07W D 40 20 0.35 440 SOT343 3 100 0.65 190 SC79 3 100 0.65 190 SOT343 8 130 0.75 318 SOT23 BAT63-02V BAT63-07W D BAT68 BAT68-04/W D 8 130 0.75 318 SOT23/SOT323 BAT68-06/W D 8 130 0.75 318 SOT23/SOT323 1) Not recommended for new designs D = Double configuration Q = Quad configuration 15 RF diodes portfolio by package PIN diodes Antenna switches SOD323 BAR50-03W BAR63-03W BAR64-03W BAR65-03W SC79 BAR50-02V BAR63-02V BAR64-02V BAR65-02V BAR67-02V SOT23 BAR63-04 BAR63-05 BAR63-06 BAR64-04 BAR64-05 BAR64-06 BAR67-04 SOT143 BAR64-07 SOT323 TSLP-2 BAR63-04W BAR63-05W BAR63-06W BAR63-04W BAR63-05W BAR63-06W BAR88-02V TSSLP-2 TSSLP-8 BAR50-02L BAR63-02L BAR64-02EL BAR90-02EL BAR90-02ELS BAR90-081LS BAR88-02LRH BAR89-02LRH BAR90-02LRH TSSLP-2 RF attenuators BA595 BA885-02V BA885 BAR14-1 BAR15-1 BAR16-1 BAR61 Recommended for new designs Not recommended for new designs Schottky diodes Mixer SOD323 SC79 BAT15-03W SOT23 SOT143 SOT323 TSLP-2 BAT15-04R BAT17 BAT17-04 BAT17-05 BAT15-099 BAT17-06W BAT15-04W BAT15-05W BAT17-04W BAT17-05W BAT17-06W BAT15-02EL BAT15-02ELS BAT15-099 BAT62-02V BAT63-02V Recommended for new designs Not recommended for new designs 16 BAT68 BAT68-04 BAT68-06 BAT62 BAT24-02LS BAT15-099LRH Power detector BAT62-03W TSLP BAT62-07W BAT63-07W BAT68-04W BAT68-06W BAT62-02L BAT62-02LS Infineon support for RF discretes Useful links and helpful information Further information, datasheets and documents Evaluationboards www.infineon.com/rftransistors www.infineon.com/rfevalboards Simulation Models www.infineon.com/rfdiodes www.infineon.com/rfcomponentlibraries Videos www.infineon.com/rf www.infineon.com/mediacenter Simulation 17 Cross reference list RF transistors Product name Manufacturer product Manufacturer Product family Product name Manufacturer product Manufacturer Product family BFP181 BFR505/T1) NXP RF Transistors BFP182W 2SC50122)/2SC50152) Renesas RF Transistors BFP182 BFU520X2) NXP RF Transistors BFP183 2SC40942)/2SC4957 Renesas RF Transistors BFP182R BFU520XR NXP RF Transistors BFP193 2) 2SC4093 /2SC5455 Renesas RF Transistors BFP182W BFU520W NXP RF Transistors BFP193W 2SC42272)/2SC50112) Renesas RF Transistors BFP183 BFU530X NXP RF Transistors BFP196 2SC40931) 2)/2SC4227 Renesas RF Transistors BFP183W BFU530W NXP RF Transistors BFP196W 2SC40932) Renesas RF Transistors BFP193 BFG540/X NXP RF Transistors BFR35AP 2SA1977 Renesas RF Transistors BFP193W BFG540W/XR NXP RF Transistors BFR93AW 2SC4226 Renesas RF Transistors BFP196 BFG540/X NXP RF Transistors BFR181 2SC55081) Renesas RF Transistors BFP196W BFG540W/XR NXP RF Transistors BFR181W 2SC55081)/2SC50101) Renesas RF Transistors BFR35AP BFT25A NXP RF Transistors BFR182W 2SC50071) Renesas RF Transistors BFR93A BFT93A NXP RF Transistors BFR183W 1) 2SC5007 Renesas RF Transistors BFR93AW BFT93W NXP RF Transistors BFR193F 2SC50061) Renesas RF Transistors BFR181 BFG505XN NXP RF Transistors BFQ19S 2SC3357/4095/4536/4703 Renesas RF Transistors BFR182 BFU520A NXP RF Transistors BFR340F 2SC56061) Renesas RF Transistors BFR182W BFS520W/PRF947 NXP RF Transistors BFR360F 1) 2SC5606 Renesas RF Transistors BFR183 BFU530A NXP RF Transistors BFP420 2SC55082) Renesas RF Transistors BFR183W BFU530W/PRF947 NXP RF Transistors BFP450 2SC55092) Renesas RF Transistors BFR193 BFU550A NXP RF Transistors BFS481 2SC56061) 2) Renesas RF Transistors NXP RF Transistors BFS483 2SC54551) 2) Renesas RF Transistors 2) BFS17P BFS17A BFR340F BFG325XR NXP RF Transistors BFR750EL3 2SC5509(NE663M04) Renesas RF Transistors BFP405 BFG410W NXP RF Transistors BFP183W 2SC5087 Toshiba RF Transistors BFP420 BFG425W NXP RF Transistors BFP193 2SC5087R Toshiba RF Transistors BFP450 BFG21W/BFG480W NXP RF Transistors BFP193W 2SC4842 Toshiba RF Transistors BFP540 1) BFG480W /BFU660F NXP RF Transistors BFP196W 2SC4842 Toshiba RF Transistors BFP540ESD BFG480W1)/BFU660F NXP RF Transistors BFR35AP MT3S19R Toshiba RF Transistors BFP620 BFU610F NXP RF Transistors BFR93AW MT3S16U Toshiba RF Transistors BFP640 BFU630F NXP RF Transistors BFR106 MT3S113/MT3S1112) Toshiba RF Transistors BFP640ESD BFU630F NXP RF Transistors BFR181W 2SC5090 Toshiba RF Transistors BFP650 BFU660F NXP RF Transistors BFR182 2SC5064 Toshiba RF Transistors BFP720 BFU710F NXP RF Transistors BFR182W 2SC5065 Toshiba RF Transistors BFP720ESD BFU710F NXP RF Transistors BFR183 2SC5084 Toshiba RF Transistors BFP740 BFU725F/BFU730F NXP RF Transistors BFR183W 2SC5085 Toshiba RF Transistors BFP740ESD BFU725F/BFU730F NXP RF Transistors BFR193 2SC5084 Toshiba RF Transistors BFP760 BFU760F NXP RF Transistors BFR193F 2SC50861) Toshiba RF Transistors BFR740EL3 BFU730LX NXP RF Transistors BFR193W 2SC5085 Toshiba RF Transistors BFP840ESD BFU710F NXP RF Transistors BFP405 MT4S34U Toshiba RF Transistors BFP843 BFU730F NXP RF Transistors BFP420 MT4S200U Toshiba RF Transistors BFR843EL3 BFU730LX NXP RF Transistors BFP450 MT4S24U1)/MT4S03BU Toshiba RF Transistors BGB707L7ESD BGU6102 NXP RF Transistors BFP540ESD MT4S300U/MT4S301U Toshiba RF Transistors 1) 1) In a different package 2) In a different pinning 18 2) RF diodes Product name Manufacturer product Manufacturer Product family Product name Manufacturer product Manufacturer Product family BAT15-02EL HSMS286x Avago RF Schottky Diodes BAR64-03W BAP64-03 NXP RF PIN Diodes BAT15-02ELS HSMS286x Avago RF Schottky Diodes BAR64-04 BAP64-04 NXP RF PIN Diodes BAT15-02LRH HSMS286x Avago RF Schottky Diodes BAR64-04W BAP64-04W NXP RF PIN Diodes BAT15-02LS HSMS286x Avago RF Schottky Diodes BAR64-05 BAP64-05 NXP RF PIN Diodes BAT15-03W HSMS286x Avago RF Schottky Diodes BAR64-05W BAP64-05W NXP RF PIN Diodes BAT15-04W HSMS286x Avago RF Schottky Diodes BAR64-06 BAP64-06 NXP RF PIN Diodes BAT15-03W 1PS76SB17 NXP RF Schottky Diodes BAR64-06W BAP64-06W NXP RF PIN Diodes BAT17 BAT17 NXP RF Schottky Diodes BAR65-02V BAP65-02 NXP RF PIN Diodes BAT17-04 PMBD353 NXP RF Schottky Diodes BAR65-03W BAP65-03 NXP RF PIN Diodes BAT62 BAS40-07 NXP RF Schottky Diodes BAR67-02V BAP51-02 NXP RF PIN Diodes BAT62-02V 1PS79SB30 NXP RF Schottky Diodes BAR88-02LRH BAP65LX NXP RF PIN Diodes BAT63-02V 1PS76SB21 NXP RF Schottky Diodes BAR88-02V BAP65-02 NXP RF PIN Diodes BAT68 1PS70SB82 NXP RF Schottky Diodes BAR89-02LRH BAP142LX NXP RF PIN Diodes BAT68-04W 1PS70SB85 NXP RF Schottky Diodes BAR14-1 1SV251 Onsemi RF PIN Diodes BAT68-06 1PS70SB86 NXP RF Schottky Diodes BAR64-04 1SV251 Onsemi RF PIN Diodes BAT15-04W BAT54SW ST Microelectronics RF Schottky Diodes BAR64-04W 1SV264 Onsemi RF PIN Diodes BAT17 BAT17 ST Microelectronics RF Schottky Diodes BAR65-03W MMVL3401 Onsemi RF PIN Diodes BAT17-04 BAS70-04 ST Microelectronics RF Schottky Diodes BA885 BA779-G Vishay RF PIN Diodes S392D-G Vishay RF PIN Diodes BAR64V-05W Vishay RF PIN Diodes BAT17-04W BAT54SW ST Microelectronics RF Schottky Diodes BAR14-1 BAT17-04W BAS70-04W ST Microelectronics RF Schottky Diodes BAR64-05W BAT17-05 BAS70-05 ST Microelectronics RF Schottky Diodes BAT17-05W BAS70-05W ST Microelectronics RF Schottky Diodes BAT17-06 BAS70-06 ST Microelectronics RF Schottky Diodes BAT17-06W BAS70-06W ST Microelectronics RF Schottky Diodes BAT15-099 SMS3926-023 Toshiba RF Schottky Diodes BAT17 JDH2S01FS Toshiba RF Schottky Diodes BAT17-04 JDH2S01FS Toshiba RF Schottky Diodes BAT17-04W JDH2S01FS Toshiba RF Schottky Diodes BAT17-07 JDH2S01FS Toshiba RF Schottky Diodes BAT68-06 1SS271 Toshiba RF Schottky Diodes BAT64  1SS294 Toshiba RF Schottky Diodes BAT68-06 1SS295 Toshiba RF Schottky Diodes BAT15-03W 1SS315 Toshiba RF Schottky Diodes BAT15-02EL JDH2S01FS Toshiba RF Schottky Diodes BAT15-02EL JDH2S02FS Toshiba RF Schottky Diodes BAT15-02ELS JDH2S02SL Toshiba RF Schottky Diodes BA595 BAP70-03 NXP RF Pin Diodes BAR50-02V BAP50-02 NXP RF Pin Diodes BAR63-02L BAP142LX NXP RF Pin Diodes BAR64-02V BAP64-02 NXP RF Pin Diodes 19 Where to buy Infineon distribution partners and sales offices: www.infineon.com/WhereToBuy Service hotline Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. ››Germany ..................... 0800 951 951 951 (German/English) ››China, mainland ........ 4001 200 951 (Mandarin/English) ››India ........................... 000 800 4402 951 (English) ››USA ............................. 1-866 951 9519 (English/German) ››Other countries .......... 00* 800 951 951 951 (English/German) ››Direct access .............. +49 89 234-0 (interconnection fee, German/English) * Please note: Some countries may require you to dial a code other than “00” to access this international number. Please visit www.infineon.com/service for your country! Mobile product catalog Mobile app for iOS and Android. www.infineon.com Published by Infineon Technologies AG 81726 Munich, Germany © 2016 Infineon Technologies AG. All rights reserved. Please note! THIS DOCUMENT IS FOR INFORMATION PURPOSES ONLY AND ANY INFORMATION GIVEN HEREIN SHALL IN NO EVENT BE REGARDED AS A WARRANTY, GUARANTEE OR DESCRIPTION OF ANY FUNCTIONALITY, CONDITIONS AND/OR QUALITY OF OUR PRODUCTS OR ANY SUITABILITY FOR A PARTICULAR PURPOSE. WITH REGARD TO THE TECHNICAL SPECIFICATIONS OF OUR PRODUCTS, WE KINDLY ASK YOU TO REFER TO THE RELEVANT PRODUCT DATA SHEETS PROVIDED BY US. OUR CUSTOMERS AND THEIR TECHNICAL DEPARTMENTS ARE REQUIRED TO EVALUATE THE SUITABILITY OF OUR PRODUCTS FOR THE INTENDED APPLICATION. WE RESERVE THE RIGHT TO CHANGE THIS DOCUMENT AND/OR THE INFORMATION GIVEN HEREIN AT ANY TIME. Order number: B132-I0319-V1-7600-EU-EC-P Date: 09 / 2016 Additional information For further information on technologies, our products, the application of our products, delivery terms and conditions and/or prices, please contact your nearest Infineon Technologies office (www.infineon.com). Warnings Due to technical requirements, our products may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by us in a written document signed by authorized representatives of Infineon Technologies, our products may not be used in any life-­ endangering applications, including but not limited to medical, nuclear, military, life-critical or any other applications where a failure of the product or any consequences of the use thereof can result in personal injury.